IEEE - Institute of Electrical and Electronics Engineers, Inc. - An 8×10-Gb/s source-synchronous I/O system based on high-density silicon carrier interconnects

2011 Symposium on VLSI Circuits

Author(s): Dickson, T.O. ; Yong Liu ; Rylov, S.V. ; Bing Dang ; Tsang, C.K. ; Andry, P.S. ; Bulzacchelli, J.F. ; Ainspan, H.A. ; Xiaoxiong Gu ; Turlapati, L. ; Beakes, M.P. ; Parker, B.D. ; Knickerbocker, J.U. ; Friedman, D.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Kyoto, Japan, Japan
Conference Date: 15 June 2011
Page(s): 80 - 81
ISBN (CD): 978-4-86348-166-4
ISBN (Paper): 978-1-61284-175-5
ISSN (CD): 2158-5601
ISSN (Electronic): 2158-5636
ISSN (Paper): 2158-5601
Regular:

A serial I/O chip set in 45nm SOI CMOS is mounted via 50µm pitch micro-C4 bumps to a silicon carrier and communicates over ultra-dense interconnects with pitches of between 8µm and 22µm. With... View More

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