IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 40nm fully functional SRAM with BL swing and WL pulse measurement scheme for eliminating a need for additional sensing tolerance margins

2011 Symposium on VLSI Circuits

Author(s): Yen-Huei Chen ; Shao-Yu Chou ; Lee, Q. ; Wei-Min Chan ; Sun, D. ; Hung-Jen Liao ; Ping Wang ; Meng-Fan Chang ; Yamauchi, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Kyoto, Japan, Japan
Conference Date: 15 June 2011
Page(s): 70 - 71
ISBN (CD): 978-4-86348-166-4
ISBN (Paper): 978-1-61284-175-5
ISSN (CD): 2158-5601
ISSN (Electronic): 2158-5636
ISSN (Paper): 2158-5601
Regular:

A method for direct measurements of bit-line (BL) swing, sense amplifier (SA) offset and word-line (WL) pulse width is demonstrated in a 40nm CMOS 32kb fully functional SRAM macro with <2%... View More

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