IEEE - Institute of Electrical and Electronics Engineers, Inc. - A fast rewritable 90nm 512Mb NOR “B4-Flash” memory with 8F2 cell size

2011 Symposium on VLSI Circuits

Author(s): Ogura, T. ; Mihara, M. ; Kawajiri, Y. ; Kobayashi, K. ; Sakaniwa, T. ; Nishikawa, K. ; Shimizu, S. ; Shukuri, S. ; Ajika, N. ; Nakashima, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Kyoto, Japan, Japan
Conference Date: 15 June 2011
Page(s): 198 - 199
ISBN (CD): 978-4-86348-166-4
ISBN (Paper): 978-1-61284-175-5
ISSN (CD): 2158-5601
ISSN (Electronic): 2158-5636
ISSN (Paper): 2158-5601
Regular:

This paper introduces a first 512Mb B4-Flash product chip with 8F2 cell size, which is the smallest NOR cell in the 90nm generation. High rewriting throughput (∼8MB/s) is realized... View More

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