IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 21nm high performance 64Gb MLC NAND flash memory with 400MB/s asynchronous toggle DDR interface

2011 Symposium on VLSI Circuits

Author(s): Chulbum Kim ; Jinho Ryu ; Taesung Lee ; Hyeonggon Kim ; Jeawoo Lim ; Jaeyong Jeong ; Seonghwan Seo ; Hongsoo Jeon ; Bokeun Kim ; InYoul Lee ; DooSeop Lee ; PanSuk Kwak ; Seongsoon Cho ; Yongsik Yim ; Changhyun Cho ; Woopyo Jeong ; Jin-Man Han ; Dooheon Song ; Kyehyun Kyung ; Young-Ho Lim ; Young-Hyun Jun
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Kyoto, Japan, Japan
Conference Date: 15 June 2011
Page(s): 196 - 197
ISBN (CD): 978-4-86348-166-4
ISBN (Paper): 978-1-61284-175-5
ISSN (CD): 2158-5601
ISSN (Electronic): 2158-5636
ISSN (Paper): 2158-5601
Regular:

A monolithic 64Gb MLC NAND flash based on 21nm process technology has been developed for the first time. The device consists of 4-plane arrays and provides page size of up to 32KB. It also... View More

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