IEEE - Institute of Electrical and Electronics Engineers, Inc. - Use of self-aligned technology in GaAs scotty diode fabrication

2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011)

Author(s): I. V. Yunusov ; A. M. Gavrilova ; V. S. Arykov
Sponsor(s): IEEE Electron Devices Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Erlagol, Altai, Russia
Conference Date: 30 June 2011
Page(s): 168 - 170
ISBN (CD): 978-1-61284-794-8
ISBN (Electronic): 978-1-61284-795-5
ISBN (Paper): 978-1-61284-793-1
ISSN (Paper): 1815-3712
DOI: 10.1109/EDM.2011.6006925
Regular:

The self-aligned technology of vertical diode fabrication is considered. The essential feature of the used technology is applying of the self-alignment principle in etching of base mesa and... View More

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