IEEE - Institute of Electrical and Electronics Engineers, Inc. - Development of self-aligned T-gate pHEMT technology

2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011)

Author(s): Fedosova, M.A. ; Gavrilova, A.M. ; Erofeev, E.V. ; Arykov, V.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Erlagol, Altai, Russia, Russia
Conference Date: 30 June 2011
Page(s): 165 - 167
ISBN (CD): 978-1-61284-794-8
ISBN (Electronic): 978-1-61284-795-5
ISBN (Paper): 978-1-61284-793-1
DOI: 10.1109/EDM.2011.6006924
Regular:

Self-aligned 0.25 μm T-gate pHEMT technology was described in this paper. Basic requirements of the self-aligned technology for gate profile were presented. Metallization system and annealing... View More

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