IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reduction of offset in pressure sensors with polysilicon piezoresistors by the pulse current annealing method

2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011)

Author(s): Polstyankin, A.V. ; Gridchin, V.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Erlagol, Altai, Russia, Russia
Conference Date: 30 June 2011
Page(s): 152 - 154
ISBN (CD): 978-1-61284-794-8
ISBN (Electronic): 978-1-61284-795-5
ISBN (Paper): 978-1-61284-793-1
DOI: 10.1109/EDM.2011.6006920
Regular:

The effect of the pulse current annealing on conductivity of polysilicon piezoresistors was researched. This method allows to adjust the offset in pressure sensors. The polysilicon resistors with... View More

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