IEEE - Institute of Electrical and Electronics Engineers, Inc. - The formation of multilayer resist mask for transistor T-gates fabrication using electron-beam lithography

2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011)

Author(s): Anishchenko, E.V. ; Erofeev, E.V. ; Ishutkin, S.V. ; Kagadei, V.A. ; Nosaeva, K.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Erlagol, Altai, Russia, Russia
Conference Date: 30 June 2011
Page(s): 146 - 149
ISBN (CD): 978-1-61284-794-8
ISBN (Electronic): 978-1-61284-795-5
ISBN (Paper): 978-1-61284-793-1
DOI: 10.1109/EDM.2011.6006918
Regular:

The processes of T-gate fabrication with gate "foot" length up to 150 nm using multilayer resist mask were investigated in the paper. The possibility of production of required gate shape using... View More

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