IEEE - Institute of Electrical and Electronics Engineers, Inc. - Bolometer at semiconductor-metal phase transition in VO 2 thin films

2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011)

Author(s): Aliev, V.S. ; Bortnikov, S.G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Erlagol, Altai, Russia, Russia
Conference Date: 30 June 2011
Page(s): 129 - 131
ISBN (CD): 978-1-61284-794-8
ISBN (Electronic): 978-1-61284-795-5
ISBN (Paper): 978-1-61284-793-1
DOI: 10.1109/EDM.2011.6006913
Regular:

A double ion beam sputtering deposition method was used for fabricating bolometric structure based on poly-crystalline VO2 film. A sensitivity of bolometric structure to infrared (IR) radiation at... View More

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