IEEE - Institute of Electrical and Electronics Engineers, Inc. - Formation of complexes of quantum dots InAs and nanoclusters as in matrix GaAs by molecular beam epitaxy

2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011)

Author(s): Zaichenko, A.A. ; Semyagin, B.R. ; Preobrazhenskii, V.V. ; Putyato, M.A. ; Nevedomskii, V.N. ; Chaldyshev, V.V. ; Bert, N.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Erlagol, Altai, Russia, Russia
Conference Date: 30 June 2011
Page(s): 105 - 107
ISBN (CD): 978-1-61284-794-8
ISBN (Electronic): 978-1-61284-795-5
ISBN (Paper): 978-1-61284-793-1
DOI: 10.1109/EDM.2011.6006906
Regular:

Epitaxial GaAs layers containing InAs semiconductor quantum dots and As metal quantum dots are grown by molecular beam epitaxy. The In As quantum dots are formed by the Stranski-Krastanov... View More

Advertisement