IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation of SiO x layer annealing process using Monte Carlo simulation

2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011)

Author(s): Mikhantiev, E.A. ; Karpov, A.N. ; Usenkov, S.V. ; Shwartz, N.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Erlagol, Altai, Russia, Russia
Conference Date: 30 June 2011
Page(s): 68 - 72
ISBN (CD): 978-1-61284-794-8
ISBN (Electronic): 978-1-61284-795-5
ISBN (Paper): 978-1-61284-793-1
DOI: 10.1109/EDM.2011.6006897
Regular:

Simulation of silicon nanocluster formation in SiOx and SiO2-SiO-SiO2 layers after high temperature annealing was carried out. Cluster size distribution depending on temperature and annealing time... View More

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