IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new approach of NAND flash cell trap analysis using RTN characteristics

2011 IEEE Symposium on VLSI Technology

Author(s): Daewoong Kang ; Sungbok Lee ; Hyun-Mog Park ; Dong-jun Lee ; Jun Kim ; Junho Seo ; Chikyoung Lee ; Cheol Song ; Chang-Sub Lee ; Hyungcheol Shin ; Jaihyuk Song ; Haebum Lee ; Jeong-Hyuk Choi ; Young-Hyun Jun
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 2011
Page(s): 206 - 207
ISBN (CD): 978-4-86348-166-4
ISBN (Paper): 978-1-4244-9949-6
ISSN (CD): 0743-1562
ISSN (Electronic): 2158-9682
ISSN (Paper): 0743-1562
Regular:

We measured RTN characteristics in NAND flash cell array and test structure having 27 nm design rule depending on different program and erase states. From these measured results, we analyzed the... View More

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