IEEE - Institute of Electrical and Electronics Engineers, Inc. - From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation

2011 IEEE Symposium on VLSI Technology

Author(s): Toledano-Luque, M. ; Kaczer, B. ; Franco, J. ; Roussel, P.J. ; Grasser, T. ; Hoffmann, T.Y. ; Groeseneken, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 2011
Page(s): 152 - 153
ISBN (CD): 978-4-86348-166-4
ISBN (Paper): 978-1-4244-9949-6
ISSN (CD): 0743-1562
ISSN (Electronic): 2158-9682
ISSN (Paper): 0743-1562
Regular:

Based on detailed understanding of behavior and statistics of individual defects, we have presented a new methodology to predict the BTI lifetime distributions in deeply scaled FETs. Moreover, we... View More

Advertisement