IEEE - Institute of Electrical and Electronics Engineers, Inc. - Exact control of junction position and Schottky barrier height in dopant-segregated epitaxial NiSi 2 for high performance metal source/drain MOSFETs

2011 IEEE Symposium on VLSI Technology

Author(s): Mizubayashi, W. ; Migita, S. ; Morita, Y. ; Ota, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 2011
Page(s): 88 - 89
ISBN (CD): 978-4-86348-166-4
ISBN (Paper): 978-1-4244-9949-6
ISSN (CD): 0743-1562
ISSN (Electronic): 2158-9682
ISSN (Paper): 0743-1562
Regular:

This paper reports junction position control and the Schottky barrier height (ФBn) tuning in ultrathin SOI MOSFETs with epitaxial NiSi2 source/drain (S/D). We demonstrate the junction... View More

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