IEEE - Institute of Electrical and Electronics Engineers, Inc. - Full metal gate with borderless contact for 14 nm and beyond

2011 IEEE Symposium on VLSI Technology

Author(s): Seo, S. ; Edge, L.F. ; Kanakasabapathy, S. ; Frank, M. ; Inada, A. ; Adam, L. ; Wang, M.M. ; Watanabe, K. ; Jamison, P. ; Ariyoshi, K. ; Sankarapandian, M. ; Fan, S. ; Horak, D. ; Li, J.T. ; Vo, T. ; Haran, B. ; Bruley, J. ; Hopstaken, M. ; Brown, S.L. ; Chang, J. ; Cartier, E.A. ; Park, D. ; Stathis, J.H. ; Doris, B. ; Divakaruni, R. ; Khare, M. ; Narayanan, V. ; Paruchuri, V.K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 2011
Page(s): 36 - 37
ISBN (CD): 978-4-86348-166-4
ISBN (Paper): 978-1-4244-9949-6
ISSN (CD): 0743-1562
ISSN (Electronic): 2158-9682
ISSN (Paper): 0743-1562
Regular:

Tungsten-based full metal gate (FMG) stacks that are equivalent to or better than metal-inserted poly-Si (MIPS) stack have been developed. These fully encapsulated FMG stacks enable borderless... View More

Advertisement