IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond

2011 IEEE Symposium on VLSI Technology

Author(s): Chung-Hsun Lin ; Haensch, W. ; Oldiges, P. ; Hailing Wang ; Williams, R. ; Chang, J. ; Guillorn, M. ; Bryant, A. ; Yamashita, T. ; Standaert, T. ; Bu, H. ; Leobandung, E. ; Khare, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2011
Conference Location: Kyoto, Japan, Japan
Conference Date: 14 June 2011
Page(s): 16 - 17
ISBN (CD): 978-4-86348-166-4
ISBN (Paper): 978-1-4244-9949-6
ISSN (CD): 0743-1562
ISSN (Electronic): 2158-9682
ISSN (Paper): 0743-1562
Regular:

The nature of FinFET devices prohibits continuous width scaling and introduces a digitization of device width. As a consequence, devices are comprised of arrays of Fins ranging from one (SRAM) to... View More

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