IEEE - Institute of Electrical and Electronics Engineers, Inc. - Backgating in submicrometer GaAs MESFET's operated at high drain bias

Author(s): A. Harrison
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 1992
Volume: 13
Page Count: 3
Page(s): 381 - 383
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.192762
Regular:

GaAs 0.8- mu m MESFETs were seen to exhibit an increased sensitivity to backgating when operated at drain voltages above 3.5 V. This is accompanied by an abrupt increase in the DC output... View More

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