IEEE - Institute of Electrical and Electronics Engineers, Inc. - Oxide charge buildup and spread-out during channel-hot-carrier injection in NMOSFETs

Author(s): W. Chen ; T.-P. Ma
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1992
Volume: 13
Page Count: 3
Page(s): 319 - 321
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.145071
Regular:

Oxide charge buildup during channel-hot-carrier (CHC) injection was investigated by the use of a modified charge-pumping technique. An apparent 'turnaround' effect in local oxide charge density... View More

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