IEEE - Institute of Electrical and Electronics Engineers, Inc. - Super-low-noise performance of direct-ion-implanted 0.25- mu m-gate GaAs MESFET's

Author(s): M. Feng ; J. Laskar ; J. Kruse
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1992
Volume: 13
Page Count: 3
Page(s): 241 - 243
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.145040
Regular:

The authors report on advanced ion implantation GaAs MESFET technology using a 0.25- mu m 'T' gate for super-low-noise microwave and millimeter-wave IC applications. The 0.25*200- mu m-gate GaAs... View More

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