IEEE - Institute of Electrical and Electronics Engineers, Inc. - Measurement of the interface specific resistivity of a heavily doped n-type InP/GaInAs heterostructure

2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM)

Author(s): Halevy, R. ; Cohen, S. ; Gavrilov, A. ; Ritter, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2011
Conference Location: Berlin, Germany, Germany
Conference Date: 22 May 2011
Page(s): 1 - 3
ISBN (Electronic): 978-3-8007-3356-9
ISBN (Paper): 978-1-4577-1753-6
Regular:

We present measurements of the specific resistivity of a heavily doped n-type InP/InGaAs interface. Transmission line measurements of an InP/GaInAs heterostructure were carried out before and... View More

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