IEEE - Institute of Electrical and Electronics Engineers, Inc. - Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy

2011 Compound Semiconductor Week (CSW) & 23rd International Conference on Indium Phosphide and Related Materials (IPRM)

Author(s): Tawil, S.N.M. ; Zhou, Y.K. ; Krishnamurthy, D. ; Emura, S. ; Hasegawa, S. ; Asahi, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2011
Conference Location: Berlin, Germany, Germany
Conference Date: 22 May 2011
Page(s): 1 - 4
ISBN (Electronic): 978-3-8007-3356-9
ISBN (Paper): 978-1-4577-1753-6
Regular:

InGaGdN layers and InGaGdN/GaN and InGaN/GaGdN superlattice (SL) structures were grown on (0001) sapphire substrates or MOVPE-grown GaN templates by plasma-assisted molecular beam epitaxy. Si... View More

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