IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 3.3-V 12-ns 16-Mb CMOS SRAM

Author(s): H. Goto ; H. Ohkubo ; K. Kondou ; M. Ohkawa ; H. Mitano ; S. Horiba ; M. Soeda ; F. Hayashi ; Y. Hachiya ; T. Shimizu ; M. Ando ; Z. Matsuda
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1992
Volume: 27
Page Count: 7
Page(s): 1,490 - 1,496
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/4.165327
Regular:

A 16-Mb CMOS SRAM having an access time of 12 ns under a 3.3-V supply has been developed with a 0.4- mu m process technology. An address access time of 12 ns has been achieved by an optimized... View More

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