IEEE - Institute of Electrical and Electronics Engineers, Inc. - Temperature-compensation circuit techniques for high-density CMOS DRAMs

Author(s): D.-S. Min ; S. Cho ; D.S. Jun ; D.-J. Lee ; Y. Seok ; D. Chin
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1992
Volume: 27
Page Count: 6
Page(s): 626 - 631
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/4.126553
Regular:

Temperature-compensation circuit techniques are presented for the CMOS DRAM internal voltage converter, the RC-delay circuit, and the back-bias generator, which do not need any additional... View More

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