IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

2011 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

Author(s): Poljak, M. ; Jovanovic, V. ; Suligoj, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2011
Conference Location: Opatija, Croatia, Croatia
Conference Date: 23 May 2011
Page(s): 49 - 54
ISBN (CD): 978-953-233-067-0
ISBN (Electronic): 978-953-233-059-5
ISBN (Paper): 978-1-4577-0996-8
Regular:

A comprehensive study of hole mobility behavior with downscaling of silicon body thickness in single-gate ultrathin-body silicon-on-insulator MOSFETs on (100) surface is performed. We... View More

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