IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optimization of the perimeter doping of ultrashallow p+-n−-n+ photodiodes

2011 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

Author(s): Knezevic, T. ; Suligoj, T. ; Sakic, A. ; Nanver, L.K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2011
Conference Location: Opatija, Croatia, Croatia
Conference Date: 23 May 2011
Page(s): 44 - 48
ISBN (CD): 978-953-233-067-0
ISBN (Electronic): 978-953-233-059-5
ISBN (Paper): 978-1-4577-0996-8
Regular:

Ultrashallow p+-n-n+ silicon photodiodes, fabricated by a pure boron deposition technology, show excellent performance for detection of Deep Ultra Violet... View More

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