IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low temperature deposition of SiN x thin films by the LPCVD method

2011 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

Author(s): Tijanic, Z. ; Ristic, D. ; Ivanda, M. ; Bogdanovic-Rakovic, I. ; Marcius, M. ; Ristic, M. ; Gamulin, O. ; Music, S. ; Furic, K. ; Chiasera, A. ; Ferrari, M. ; Righini, G.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2011
Conference Location: Opatija, Croatia, Croatia
Conference Date: 23 May 2011
Page(s): 23 - 24
ISBN (CD): 978-953-233-067-0
ISBN (Electronic): 978-953-233-059-5
ISBN (Paper): 978-1-4577-0996-8
Regular:

Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Films with the different values of the nitrogen content were deposited by... View More

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