IEEE - Institute of Electrical and Electronics Engineers, Inc. - A high output mode for submicron M-R memory cells

Author(s): A.V. Pohm ; J.M. Daughton ; K.E. Spears
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1992
Volume: 28
Page Count: 3
Page(s): 2,356 - 2,358
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/20.179490
Regular:

A mode which substantially increases the nondestructive read output from submicron magnetoresistive (MR) memory elements has been demonstrated. This mode increases the output for large cells by... View More

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