IEEE - Institute of Electrical and Electronics Engineers, Inc. - An analytical model for floating-gate MOSFET including the effects of the overlapping capacitance

Author(s): T. Manku ; E.L. Heasell
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1992
Volume: 39
Page Count: 3
Page(s): 2,821 - 2,823
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.168737
Regular:

An analytical model for the current-voltage characteristics of a floating-gate MOSFET are developed. The effects of the overlapping capacitance are included. The model was tested on experimental... View More

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