IEEE - Institute of Electrical and Electronics Engineers, Inc. - InGaAs/GaAs planar doped barrier electron emitters

Author(s): W.N. Jiang ; D.J. Kolcombe ; M.M. Hashemi ; U.K. Mishra
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1992
Volume: 39
Page Count: 1
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.163504
Regular:

Summary form only given. Emission from planar doped barrier (PDB) hot electron generators is demonstrated. The PDB structure consists of a sequence of n/sup +/-i- delta (p/sup +/)-i-n/sup +... View More

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