IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical characteristics of TiB/sub 2/ for ULSI applications

Author(s): C.S. Choi ; Q. Wang ; C.M. Osburn ; G.A. Ruggles ; A.S. Shah
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 1992
Volume: 39
Page Count: 5
Page(s): 2,341 - 2,345
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.158806
Regular:

The work function of TiB/sub 2/ was measured using Fowler-Nordheim tunneling in MOS capacitors, Schottky diode current measurements, capacitance-voltage techniques, and contact resistance. The... View More

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