IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thermal noise in buried-channel MOSFET

Author(s): L. Goldminz ; Y. Nemirovsky
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 1992
Volume: 39
Page Count: 8
Page(s): 2,325 - 2,332
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.158804
Regular:

A new model for the thermal noise in long buried-channel MOS transistors is presented. The model calculates the dependence of the transistor noise performance on both device fabrication parameters... View More

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