IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new technique to determine the average low-field electron mobility in MESFET using C-V measurement

Author(s): B.-J. Moon ; M.J. Helix ; S. Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1992
Volume: 39
Page Count: 5
Page(s): 1,982 - 1,986
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.155868
Regular:

A method to determine the average low-field mobility using the number of electrons available for the conduction based on C-V measurement is proposed. This technique requires neither information of... View More

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