IEEE - Institute of Electrical and Electronics Engineers, Inc. - Graphene field effect transistors for detection of ionizing radiation

2010 IEEE Nuclear Science Symposium and Medical Imaging Conference (2010 NSS/MIC)

Author(s): Patil, A. ; Lopez, G. ; Foxe, M. ; Childres, I. ; Roecker, C. ; Boguski, J. ; Jovanovic, I. ; Chen, Y.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2010
Conference Location: Knoxville, TN, USA, USA
Conference Date: 30 October 2010
Page(s): 674 - 676
ISBN (CD): 978-1-4244-9104-9
ISBN (Electronic): 978-1-4244-9105-6
ISBN (Paper): 978-1-4244-9106-3
ISSN (CD): 1082-3654
ISSN (Paper): 1095-7863
DOI: 10.1109/NSSMIC.2010.5873845
Regular:

A novel radiation detector based on a graphene field effect transistor (GFET) is experimentally demonstrated. The detection in GFET relies on the high sensitivity of the resistivity of graphene to... View More

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