IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation of charge multiplication and trap-assisted tunneling in irradiated planar pixel sensors

2010 IEEE Nuclear Science Symposium and Medical Imaging Conference (2010 NSS/MIC)

Author(s): Benoit, M. ; Lounis, A. ; Dinu, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2010
Conference Location: Knoxville, TN, USA, USA
Conference Date: 30 October 2010
Page(s): 612 - 616
ISBN (CD): 978-1-4244-9104-9
ISBN (Electronic): 978-1-4244-9105-6
ISBN (Paper): 978-1-4244-9106-3
ISSN (CD): 1082-3654
ISSN (Paper): 1095-7863
DOI: 10.1109/NSSMIC.2010.5873832
Regular:

We present a model for the TCAD simulation of charge multiplication and trap-to-band tunneling to explain the discrepancies between the experimentally observed charge collection in highly... View More

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