IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optimization and predication of leakage current characteristics in wide domino OR gates under PVT variation

2010 IEEE International SOC Conference (SOCC)

Author(s): Na Gong ; Sridhar, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Las Vegas, NV, USA, USA
Conference Date: 27 September 2010
Page(s): 19 - 24
ISBN (CD): 978-1-4244-6681-8
ISBN (Electronic): 978-1-4244-6683-2
ISBN (Paper): 978-1-4244-6682-5
ISSN (CD): Pending
ISSN (Paper): Pending
DOI: 10.1109/SOCC.2010.5784663
Regular:

The leakage current characteristics of wide dual Vt domino OR gates is studied and gate-level models for estimating sub-threshold leakage and gate leakage current with two different sleep states... View More

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