IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-gain, low-leakage GaAs pseudo-HBT's for operation in reduced temperature environments

Author(s): P.E. Dodd ; M.R. Melloch ; M.S. Lundstrom
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1991
Volume: 12
Page Count: 3
Page(s): 629 - 631
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.119220
Regular:

GaAs pseudo-heterojunction bipolar transistors (HBTs) that make use of the difference in effective bandgap narrowing in n- and p-type GaAs have been fabricated and characterized. A current... View More

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