IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interface characterization of fully depleted SOI MOSFETs by the dynamic transconductance technique

Author(s): D.E. Ioannou ; X. Zhong ; B. Mazhari ; G.J. Campisi ; H.L. Hughes
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1991
Volume: 12
Page Count: 3
Page(s): 430 - 432
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.119155
Regular:

The dynamic transconductance technique of MOSFET interface characterization is adapted to fully depleted silicon-on-insulator (SOI) transistors and is used to measure the interface-state... View More

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