IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-performance bipolar technology for improved ECL power delay

Author(s): J. Warnock ; J.D. Cressler ; K.A. Jenkins ; C. Stanis ; J.Y.C. Sun ; D.D. Tang ; E. Petrillo ; C.K. Hu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1991
Volume: 12
Page Count: 3
Page(s): 315 - 317
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.82072
Regular:

A new shallow trench process for isolation of bipolar devices is shown to allow butting of the emitter-base junction to the field oxide edge, thereby greatly reducing the overall device size and... View More

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