IEEE - Institute of Electrical and Electronics Engineers, Inc. - 60-GHz noise performance of ion-implanted In/sub x/Ga/sub 1-x/As MESFET's

Author(s): C.L. Lau ; M. Feng ; J. Schellenberg ; P. Brusen ; T. Lepkowski ; T. Hwang ; C. Ito
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1991
Volume: 12
Page Count: 2
Page(s): 244 - 245
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.79561
Regular:

The authors report the 60-GHz noise performance of low-noise ion-implanted In/sub x/Ga/sub 1-x/As MESFETs with 0.25 mu m T-shaped gates and amplifiers using these devices. The device noise figure... View More

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