IEEE - Institute of Electrical and Electronics Engineers, Inc. - Linewidth enhancement factor and high temperature performance of 1.48 mu m strained InGaAs-InGaAsP multiquantum well laser

Author(s): N.K. Dutta ; N.A. Olsson ; H.K. Temkin ; R.A. Logan ; T. Tanbun-Ek
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1991
Volume: 27
Page Count: 3
Page(s): 678 - 680
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/3.81376
Regular:

The linewidth enhancement factor alpha in strained InGaAs-InGaAsP multiquantum well (MQW) lasers emitting near 1.48 mu m has been experimentally determined. The measured alpha at the lasing... View More

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