IEEE - Institute of Electrical and Electronics Engineers, Inc. - The Effect of Processing Parameters on Resistivity of Boron-doped Hydrogenated Nanocrystalline Silicon Thin Films

2010 International Conference on Electrical and Control Engineering (ICECE)

Author(s): Pan Haibin ; Ding Jianning ; Cheng Guanggui ; Guo Liqiang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2010
Conference Location: Wuhan, China, China
Conference Date: 25 June 2010
Page(s): 5,722 - 5,725
ISBN (CD): 978-0-7695-4031-3
ISBN (Electronic): 978-1-4244-6881-2
ISBN (Paper): 978-1-4244-6880-5
DOI: 10.1109/iCECE.2010.1390
Regular:

The boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition (PECVD). The microstructures of boron-doped nc-Si:H films were... View More

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