IEEE - Institute of Electrical and Electronics Engineers, Inc. - 1550 nm high contrast grating VCSEL using proton-implant-defined aperture

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Chase, C. ; Yi Rao ; Chang-Hasnain, C.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 13 - 14
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642775
Regular:

We report an HCG VCSEL using a proton-implant-defined aperture operating at 1550 nm. The full laser structure is grown in a single epitaxial run, reducing fabrication complexity and cost,... View More

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