IEEE - Institute of Electrical and Electronics Engineers, Inc. - Marked efficiency enhancement of 250 nm-band AlGaN Deep-UV LEDs using multiquantum-barrier

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Tsukada, Y. ; Hirayama, H. ; Akiba, M. ; Maeda, N. ; Kamata, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 25 - 26
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642769
Regular:

Deep-ultraviolet (DUV) light-emitting diodes (LEDs) have a wide range of potential applications such as sterilization, water purification, medicine and biochemistry, and so on. We have recently... View More

Advertisement