IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dot state distribution, gain and threshold in 700nm band InP/AlGaInP quantum dot lasers

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Al-Ghamdi, M.S. ; Smowton, P.M. ; Blood, P. ; Krysa, A.B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 35 - 36
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642766
Regular:

We investigate the affect of growth and wafer design improvements, such as growth temperature, on the dot size distribution and dot density. This results in a threshold current density as low as... View More

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