IEEE - Institute of Electrical and Electronics Engineers, Inc. - Carrier injection-level dependence of lateral ambipolar diffusion in S-K quantum-dot lasers

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Naidu, D. ; Smowton, P.M. ; Summers, H.D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 67 - 68
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642750
Regular:

A strong variation in the lateral ambipolar diffusion length (Ld) with injectionlevel in quantum-dot lasers results in two regimes of low Ld. Only one of these should be used for efficient laser... View More

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