IEEE - Institute of Electrical and Electronics Engineers, Inc. - Development of AlGaN-based deep-UV LEDs using high-quality AlN on sapphire

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Hirayama, H. ; Tsukada, Y. ; Akiba, M. ; Kamata, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 97 - 98
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642733
Regular:

AlGaN and quaternary InAlGaN alloys are attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-emitting diodes (LEDs) or laser diodes (LDs) [1,2]. We... View More

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