IEEE - Institute of Electrical and Electronics Engineers, Inc. - Impact of onpolar plane for deep ultraviolet laser diodes based on AlGa/AlN quantum wells

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Kojima, K. ; Yamaguchi, A.A. ; Funato, M. ; Kawakami, Y. ; Noda, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 101 - 102
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642731
Regular:

Band structures and optical gain of nonpolar AlGaN/AlN quantum wells were investigated. It was found that nonpolar quantum wells drastically improved optical gain and anisotropy compared to those... View More

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