IEEE - Institute of Electrical and Electronics Engineers, Inc. - Lasing properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on a silicon substrate grown by MOVPE

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Hossain, N. ; Jin, S.R. ; Sweeney, S.J. ; Liebich, S. ; Ludewig, P. ; Zimprich, M. ; Kunert, B. ; Volz, K. ; Stolz, W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 109 - 110
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642727
Regular:

Lasing operation up to 120K is reported for direct band-gap GaNAsP grown monolithically on a silicon substrate. Jth=0.81kAcm−2 is measured at 80K with a To of 97K from 40-120K for... View More

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