IEEE - Institute of Electrical and Electronics Engineers, Inc. - MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Liebich, S. ; Zimprich, M. ; Ludewig, P. ; Beyer, A. ; Volz, K. ; Stolz, W. ; Kunert, B. ; Hossain, N. ; Jin, S.R. ; Sweeney, S.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 143 - 144
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642712
Regular:

Laser structures containing the dilute nitride material Ga(NAsP) can be grown lattice matched on silicon substrates with high crystal quality and low defect density. Lasing operation from broad... View More

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