IEEE - Institute of Electrical and Electronics Engineers, Inc. - High power 625-nm AlGaInP laser diode

2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

Author(s): Shimada, N. ; Ohno, A. ; Abe, S. ; Miyashita, M. ; Yagi, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2010
Conference Location: Kyoto, Japan, Japan
Conference Date: 26 September 2010
Page(s): 150 - 151
ISBN (CD): 978-1-4244-5682-6
ISBN (Electronic): 978-1-4244-5684-0
ISBN (Paper): 978-1-4244-5683-3
ISSN (CD): 0899-9406
ISSN (Paper): 0899-9406
DOI: 10.1109/ISLC.2010.5642708
Regular:

High power 625-nm AlGaInP laser diode was fabricated and evaluated. Remarkable short wavelength lasing at 624.9 nm was achieved on the condition of Tc = 25°C and 50 mW output under CW operation.... View More

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